ON THE CONCENTRATION-DEPENDENCE OF THE THERMAL IONIZATION-ENERGY OF IMPURITIES IN INP

被引：18
作者：
PODOR, B
机构：
[1] Res. Inst. for Tech. Phys., Hungarian Acad. of Sci., Budapest
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1987年 / 2卷 / 03期
关键词：
D O I：
10.1088/0268-1242/2/3/008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is shown that recently obtained data for the thermal ionisation energy of donors in InP exhibit the usual dependence on the concentration of ionised donor centres. It is suggested that the parameter in the semi-empirical relationship E = E0 - alpha N1/3 shows a definite correlation with the static dielectric constant in various semiconductors as predicted by a simple model based on Coulomb interactions.
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页码：177 / 178
页数：2
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