AU AND AL INTERFACE REACTIONS WITH SIO2

被引：74
作者：
BAUER, RS
BACHRACH, RZ
BRILLSON, LJ
机构：
[1] XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580
[2] STANFORD SYNCHROTRON,RADIAT LAB,STANFORD,CA
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 11期
关键词：
D O I：
10.1063/1.91720
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1006 / 1008
页数：3
相关论文
共 31 条
[1]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[2]   OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].
ASPNES, DE ;
THEETEN, JB .
PHYSICAL REVIEW LETTERS, 1979, 43 (14) :1046-1050
[3]   SURFACE-REACTIONS AND INTERDIFFUSION [J].
BACHRACH, RZ ;
BAUER, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1149-1153
[4]  
Bauer R. S., 1979, Physics of Semiconductors 1978, P797
[5]  
Bauer R.S., 1980, PHYSICS MOS INSULATO, P221
[6]   INTERMEDIATE OXIDATION-STATE OF SI(111) - CORE PHOTOELECTRON ABSORPTION VS CHEMICAL-SHIFTS [J].
BAUER, RS ;
BACHRACH, RZ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :509-510
[7]  
BAUER RS, 1978, PHYSICS SIO2 ITS INT, P401
[8]   EVIDENCE OF SIO AT THE SI-OXIDE INTERFACE BY SURFACE SOFT-X-RAY ABSORPTION NEAR EDGE SPECTROSCOPY [J].
BIANCONI, A .
SURFACE SCIENCE, 1980, 99 (01) :76-86
[9]   PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE [J].
BRAICOVICH, L ;
GARNER, CM ;
SKEATH, PR ;
SU, CY ;
CHYE, PW ;
LINDAU, I ;
SPICER, WE .
PHYSICAL REVIEW B, 1979, 20 (12) :5131-5141
[10]  
BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
1234