INTERFACE STUDIES OF ALXGA1-XAS-GAAS HETEROJUNCTIONS

被引:44
作者
GARNER, CM
SU, CY
SHEN, YD
LEE, CS
PEARSON, GL
SPICER, WE
EDWALL, DD
MILLER, D
HARRIS, JS
机构
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[2] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
关键词
D O I
10.1063/1.326329
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ion-depth profiling with Auger electron spectroscopy has been used to measure the interface width of MBE, VPE, and LPE AlxGa 1-xAs-GaAs heterojunctions purposely fabricated to minimize interface width. By profiling the MBE structures with 250-eV Ar+ ions, it was possible to experimentally measure an interface width (10-90% Al p-p height) of ∼15 Å. The measured interface width of VPE and LPE Al xGa1-xAs-GaAs was found to be ∼65 and 100 Å, respectively. Since rectification has not in the past been observed in n-n AlxGa1-xAs-GaAs heterojunctions, n-n AlxGa 1-xAs-GaAs heterojunctions were fabricated in this study to enhance the presence of the conduction-band discontinuity (enhancing any possible rectification) by growing these heterojunctions from lightly doped (10 15-1016 cm-3) material; however, these heterojunctions did not exhibit rectification, in agreement with previous studies. The interface widths of these samples were then measured and found to be much smaller than present theories require to remove the barrier. Since compositional grading is not large enough to explain the absence of rectification, several alternative explanations to the absence of rectification are discussed.
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页码:3383 / 3389
页数:7
相关论文
共 30 条
[1]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[2]  
CHANG CC, 1974, CHARACTERIZATION SOL, P509
[3]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[4]   INTERDIFFUSION BETWEEN GAAS AND ALAS [J].
CHANG, LL ;
KOMA, A .
APPLIED PHYSICS LETTERS, 1976, 29 (03) :138-141
[5]   SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J].
CHEUNG, DT ;
CHIANG, SY ;
PEARSON, GL .
SOLID-STATE ELECTRONICS, 1975, 18 (03) :263-266
[6]   EFFECTS OF ZN CROSS DIFFUSION ON PROPERTIES OF N(ALXGA1-XAS)-P(GAAS) HETEROJUNCTIONS [J].
CHEUNG, DT ;
SHEN, CC ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5226-5228
[7]  
DERNIER PD, 1977, B AM PHYS SOC, V22, P293
[8]   DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].
DINGLE, R ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1327-1330
[9]   DIFFUSION ACROSS MOLECULAR-BEAM-GROWN GAAS-ALXGA1-XAS INTERFACE [J].
DINGLE, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1006-1006
[10]   ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
DAPKUS, PD ;
HOLONYAK, N ;
REZEK, EA ;
CHIN, R .
APPLIED PHYSICS LETTERS, 1978, 32 (05) :295-297