SHUBNIKOV-DEHAAS OSCILLATIONS AROUND V = 1/2 LANDAU-LEVEL FILLING FACTOR

被引：88

作者：

DU, RR ^{[1
]}

STORMER, HL ^{[1
]}

TSUI, DC ^{[1
]}

PFEIFFER, LN ^{[1
]}

WEST, KW ^{[1
]}

机构：

[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 90卷 / 02期

关键词：

D O I：

10.1016/0038-1098(94)90934-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We analyze the magneto-resistance due to the higher-order fractional quantum Hall effect (FQHE) around v = 1/2 Landau level filling factor within the standard framework of Shubnikov-deHaas oscillations adopting v = 1/2 as the new origin for an effective magnetic field, B(eff), and find it readily applicable. We deduce ad hoc effective masses, and scattering rates from our analysis. The masses are approximately constant and exceed the electron mass in GaAs by about a factor of 10. Our successful analysis of the FQHE features, in terms of this conventional tool for electron magneto-transport, further strengthens the case for the existence of exotic new particles in the FQHE.

引用

页码：71 / 75

页数：5

共 27 条

[1] QUANTUM THEORY OF TRANSVERSE GALVANO-MAGNETIC PHENOMENA [J].