AVALANCHE BREAKDOWN DELAY IN SEMICONDUCTOR DIODES

被引：0
作者：
AKIMOV, PV
SEREZHKI.YN
GREKHOV, IV
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1972年 / 6卷 / 06期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：971 / &
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共 12 条
[1]  
Akimov P. V., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P2099
[2]  
AKIMOV PV, 1971, SOV PHYS SEMICOND+, V4, P1802
[3]  
AKIMOV PV, 1972, FIZ TEKH POLUPROV, V6, P1118
[4]   MECHANISMS CONTRIBUTING TO NOISE PULSE RATE OF AVALANCHE DIODES [J].
HAITZ, RH .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3123-&
[5]   MICROPLASMAS IN GAAS DIODES [J].
KEIL, G ;
RUGE, I .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2600-&
[6]   TURN-ON MECHANISM OF A MICROPLASMA [J].
KIMURA, C ;
NISHIZAWA, JI .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (12) :1453-+
[7]   THEORY OF MICROPLASMA INSTABILITY IN SILICON [J].
MCINTYRE, RJ .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :983-&
[8]   A REPORT ON DELAY TIME OF AN AVALANCHE DISCHARGE IN SILICON [J].
NIELD, MW ;
LECK, JH .
BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (02) :185-&
[9]   MICROPLASMA BREAKDOWN IN GERMANIUM [J].
POLESHUK, M ;
DOWLING, PH .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) :3069-&
[10]   GAAS-GE ALLOYED JUNCTION [J].
SHIRAFUJ.J ;
NAKAYAMA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1964, 3 (12) :801-&
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