HETEROEPITAXIAL GROWTH OF INP/IN0.52GA0.48AS STRUCTURES ON GAAS (100) BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：9
作者：
CHIN, TP
TU, CW
机构：
[1] Department of Electrical and Computer Engineering, 0407, University of California, San Diego
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 21期
关键词：
13;
D O I：
10.1063/1.109239
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High quality In0.52Ga0.48As, InP, and In0.52Ga0.4gAs/InP single quantum wells were grown on GaAs (100) by gas-source molecular beam epitaxy (GSMBE) with a 2 mum thick InxGa1-xAs buffer layer where x was linearly graded from 0 to 0.52. Reflection high-energy electron diffraction patterns and specular beam intensity oscillations showed that the growth mode of In0.52Ga0.48As and InP were layer by layer despite the lattice mismatch (DELTAa/a = 3.8%) between InP and GaAs. Photoluminescence line widths at 10 K of a 1-mum thick InP and a 5-nm wide In0.52Ga0.48As/InP single quantum well are 4.9 and 10 meV, respectively, which are comparable to the values measured from similar structures grown lattice matched on an InP substrate (3.5 and 7 meV, respectively) by the same GSMBE system. The quantum-well luminescence intensity is also comparable to lattice-matched samples.
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收藏
页码：2708 / 2710
页数：3
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