INGAAS-GAAS-INGAP DISTRIBUTED-FEEDBACK BURIED HETEROSTRUCTURE STRAINED-QUANTUM-WELL LASERS FOR HIGH-POWER OPERATION AT 0.98-MU-M

被引：2

作者：

SIN, YK

HORIKAWA, H

KAMIJOH, T

机构：

[1] Semiconductor Technology Laboratory, OkiElectric Industry Company Ltd.

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 09期

关键词：

Crystal structure - High power lasers - Morphology - Semiconductor lasers - Semiconductor quantum wells;

D O I：

10.1109/68.257160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on device results from InGaAs-GaAs distributed feedback buried heterostructure (DFB BH) strained-quantum-well lasers with InGaP cladding layers. DFB BH lasers with a p-n InGaP current blocking junction entirely grown by a three-step MOVPE on GaAs substrates show a low laser threshold of 3.2 mA and a high output power of 41 mW with single-longitudinal-mode operation, both measured CW at RT. The monomode oscillation is obtained even at the injection current of 140 mA (44 times the laser threshold) with the side-mode suppression ratio of 35 dB and the temperature sensitivity of Bragg modes being 0.5 angstrom/degrees-C measured between 20 and 40-degrees-C.

引用

页码：966 / 968

页数：3

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