INGAAS-GAAS-INGAP DISTRIBUTED-FEEDBACK BURIED HETEROSTRUCTURE STRAINED-QUANTUM-WELL LASERS FOR HIGH-POWER OPERATION AT 0.98-MU-M

Data are presented on device results from InGaAs-GaAs distributed feedback buried heterostructure (DFB BH) strained-quantum-well lasers with InGaP cladding layers. DFB BH lasers with a p-n InGaP current blocking junction entirely grown by a three-step MOVPE on GaAs substrates show a low laser threshold of 3.2 mA and a high output power of 41 mW with single-longitudinal-mode operation, both measured CW at RT. The monomode oscillation is obtained even at the injection current of 140 mA (44 times the laser threshold) with the side-mode suppression ratio of 35 dB and the temperature sensitivity of Bragg modes being 0.5 angstrom/degrees-C measured between 20 and 40-degrees-C.