PICOSECOND CARRIER LIFETIME IN ERBIUM-DOPED-GAAS

被引：29

作者：

GUPTA, S ^{[1
]}

SETHI, S ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.108764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of free-carrier lifetime on erbium concentration has been measured in molecular-beam epitaxial GaAs epilayers doped with erbium. A gradual reduction in the lifetime is observed with increased dopant incorporation. For a high doping concentration in the range of 10(19) cm-3 or greater, a carrier lifetime of approximately 1 ps is obtained. Due to the high resistivity of these epilayers, they can also be used as a photoconductive switch, with good responsivity. This leads to new and novel applications for rare-earth doped III-V semiconductors.

引用

页码：1128 / 1130

页数：3

共 9 条

[1] PICOSECOND OPTICAL ELECTRONIC SAMPLING - CHARACTERIZATION OF HIGH-SPEED PHOTODETECTORS [J].

AUSTON, DH ;

SMITH, PR .

APPLIED PHYSICS LETTERS, 1982, 41 (07) :599-601

[2]

BEYATTOU T, 1992, APPL PHYS LETT, V60, P350

[3] CARRIER LIFETIME VERSUS ION-IMPLANTATION DOSE IN SILICON ON SAPPHIRE [J].

DOANY, FE ;

GRISCHKOWSKY, D ;

CHI, CC .

APPLIED PHYSICS LETTERS, 1987, 50 (08) :460-462

[4]

GALTIER P, 1989, GAAS RELATED COMPOUN, P327

[5] SUBPICOSECOND CARRIER LIFETIME IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

GUPTA, S ;

FRANKEL, MY ;

VALDMANIS, JA ;

WHITAKER, JF ;

MOUROU, GA ;

SMITH, FW ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1991, 59 (25) :3276-3278

[6] EXCITATION MECHANISMS OF RARE-EARTH (YB) LUMINESCENCE IN III-V SEMICONDUCTORS (INP) [J].

LHOMER, C ;

LAMBERT, B ;

TOUDIC, Y ;

LECORRE, A ;

GAUNEAU, M ;

CLEROT, F ;

SERMAGE, B .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (09) :916-923

[7]

POMRENKE GS, 1992, J APPL PHYS, V69, P601

[8]

SETHI S, 1992, JUN EL MAT C BOST

[9] 1-THZ-BANDWIDTH PROBER FOR HIGH-SPEED DEVICES AND INTEGRATED-CIRCUITS [J].

VALDMANIS, JA .

ELECTRONICS LETTERS, 1987, 23 (24) :1308-1310

← 1 →