PECVD SILICON-NITRIDE DIAPHRAGMS FOR CONDENSER MICROPHONES

被引：25
作者：
SCHEEPER, PR
VOORTHUYZEN, JA
BERGVELD, P
机构：
[1] University of Twente, 7500 AE Enschede
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 1991年 / 4卷 / 1-2期
关键词：
D O I：
10.1016/0925-4005(91)80180-R
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile stress. Aluminum can be etched selectively with respect to the silicon nitride films. Using aluminum as a sacrificial layer, 300 x 300-mu-m silicon nitride diaphragms have been made. Admittance measurements on silicon nitride capacitances have shown that the insulating properties are sufficiently good for application as a microphone diaphragm.
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页码：79 / 84
页数：6
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