CORE-LEVEL SHIFTS OF THE GE(100)-(2X1) SURFACE AND THEIR ORIGINS

被引：38

作者：

CAO, R

YANG, X

TERRY, J

PIANETTA, P

机构：

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.45.13749

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface shifts of the Ge 3d core level from the clean Ge(100)-(2x1) surface have been investigated using Si epitaxial layers grown with Sb as a surfactant. We are able to obtain a line shape close to that of the natural line shape of the Ge 3d and, in turn, we have resolved two surface-related components in the core-level spectrum of the clean surface, in contrast to previously observed single component. The origin of these shifts is addressed: one comes from the top layer and the other from the layer below the surface. A comparison with the Si(100)-(2x1) surface is also presented.

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页码：13749 / 13752

页数：4

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