ANALYSIS OF CRYSTAL DEFECTS BY TRANSMISSION ELECTRON-MICROSCOPY

被引:1
作者
ARMIGLIATO, A
机构
[1] Laboratorio LAMEL del C.N.R. -, 40126 BOLOGNA, Via Castagnoli
来源
MATERIALS CHEMISTRY | 1979年 / 4卷 / 03期
关键词
D O I
10.1016/0390-6035(79)90034-8
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
in the present paper the basic concepts of the transmission electron microscopy are outlined. In particular, the relevant aspects of both the kinematical and the dynamical theory of contrast, and their usefulness in the interpretation of the electron micrographs and of the diffraction patterns, are shortly discussed. Among the various examples of application of this technique to the materials science reported in literature, the methods currently employed to characterize, from the electron micrographs, lattice defects in crystalline materials, such as dislocations, loops, stacking faults and twins, are emphasized in this article. © 1979.
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页码:453 / 471
页数:19
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