COMPOSITION DEPENDENCE OF MAGNETIZATION OF ION-IMPLANTED COBALT LAYERS

被引：0
|
作者：
UNKROTH, A
GOTZ, G
HEIBER, U
ANDRA, W
机构：
来源：
EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS | 1988年 / 8卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：240 / 243
页数：4
相关论文
共 50 条
  • [21] PIEZORESISTIVE PROPERTIES OF ION-IMPLANTED LAYERS IN SILICON
    CHU, SF
    TOPICH, JA
    KO, WH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C309 - C309
  • [22] MOS FREQUENCY SOARS WITH ION-IMPLANTED LAYERS
    SHANNON, JM
    STEPHEN, J
    FREEMAN, JH
    ELECTRONICS, 1969, 42 (03): : 96 - &
  • [23] AMORPHIZATION AND RECRYSTALLIZATION OF INSB ION-IMPLANTED LAYERS
    CHERNYSHEVA, NY
    KACHURIN, GA
    BOGATYRIOV, VA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 47 (01): : K5 - &
  • [24] Determination of the composition of ion-implanted MgO surface layers by the Rutherford and resonance ion backscattering method
    Zavodchikov, VM
    Kobzev, AP
    Kryuchkov, YY
    Pichugin, VF
    Sokhoreva, VV
    Frangulyan, TS
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (01): : 7 - 11
  • [25] Characterization Techniques for Ion-Implanted Layers in Silicon
    Polignano, Maria Luisa
    Codegoni, Davide
    Galbiati, Amos
    Grasso, Salvatore
    Mica, Isabella
    Basa, Peter
    Pongracz, Anita
    Kiss, Zoltan Tamas
    Nadudvari, Gyorgy
    2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018), 2018, : 144 - 152
  • [26] ION-IMPLANTED STRUCTURES AND DOPED LAYERS IN DIAMOND
    PRINS, JF
    MATERIALS SCIENCE REPORTS, 1992, 7 (7-8): : 271 - 364
  • [27] Paramagnetic properties of ion-implanted polymer layers
    Kozlov I.V.
    Odzhaev V.B.
    Popok V.N.
    Azarko I.I.
    Kozlova E.I.
    Journal of Applied Spectroscopy, 1998, 65 (4) : 583 - 588
  • [28] DAMAGE AND REORDERING OF ION-IMPLANTED LAYERS OF INP
    KENNEDY, EF
    APPLIED PHYSICS LETTERS, 1981, 38 (05) : 375 - 377
  • [29] INVESTIGATION OF ION-IMPLANTED GAP LAYERS BY ELLIPSOMETRY
    DOBBS, BC
    ANDERSON, WJ
    PARK, YS
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5052 - 5056
  • [30] ION-IMPLANTED BURIED NITRIDE LAYERS IN SILICON
    OLOFSSON, R
    HOLMEN, G
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (1-2): : 161 - 164
12345