DEPLETION CORRECTIONS IN VARIABLE TEMPERATURE HALL MEASUREMENTS

被引：27

作者：

LEPKOWSKI, TR

DEJULE, RY

TIEN, NC

KIM, MH

STILLMAN, GE

机构：

[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 10期

关键词：

D O I：

10.1063/1.338343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4808 / 4811

页数：4

相关论文

共 10 条

[1] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703
[2] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS
CHANDRA, A
WOOD, CEC
WOODARD, DW
EASTMAN, LF
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 645 - 650
[3] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &
[4] Jesper T., 1980, Semi-Insulating III-V Materials, P233
[5] ELECTRONIC CHARACTERIZATION OF COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES
MONCH, W
[J]. THIN SOLID FILMS, 1983, 104 (3-4) : 285 - 299
[6] CHEMISORPTION-INDUCED DEFECTS ON GAAS(110) SURFACES
MONCH, W
GANT, H
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (07) : 512 - 515
[7] NAG B, 1980, ELECTRON TRANSPORT C
[8] Rode D. L., 1975, SEMICONDUCT SEMIMET, V10
[9] HALL COEFFICIENT FACTOR FOR POLAR MODE SCATTERING IN N-TYPE GAAS
STILLMAN, GE
WOLFE, CM
DIMMOCK, JO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (06) : 1199 - &
[10] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS
STILLMAN, GE
WOLFE, CM
[J]. THIN SOLID FILMS, 1976, 31 (1-2) : 69 - 88