ELECTRICAL CHARACTERISTICS OF DIODES FABRICATED IN SELECTIVE-EPITAXIAL SILICON WELLS

被引：6
|
作者：
HARAME, D
GINSBERG, B
ARIENZO, M
MADER, S
DAGOSTINO, M
机构：
[1] IBM, Yorktown Heights, NY, USA, IBM, Yorktown Heights, NY, USA
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 09期
关键词：
D O I：
10.1016/0038-1101(87)90126-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
20
引用
收藏
页码：907 / 912
页数：6
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