共 15 条
[3]
MBE GROWTH OF HIGH-QUALITY INP USING TRIETHYLINDIUM AS AN INDIUM SOURCE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1984, 23 (09)
:L737-L739
[4]
KUBASCHEWSKI O, 1979, METALLURGICAL THERMO, P267
[5]
MILNES AG, 1973, DEEP IMPURITIES SEMI, P154
[8]
GAAS GROWTH IN METAL-ORGANIC MBE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:671-673
[9]
EFFECT OF OPERATING PRESSURE ON THE PROPERTIES OF GAAS GROWN BY LOW-PRESSURE MOCVD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1983, 22 (12)
:L795-L797
[10]
EPITAXIAL-GROWTH OF HIGH-PURITY GAAS BY LOW-PRESSURE MOCVD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1984, 23 (02)
:L100-L102