ION-IMPLANTATION EFFECTS IN INSULATORS AND THE LONG-TERM STABILITY OF RADIOACTIVE-WASTE STORAGE MATERIALS

被引：3
作者：
DRAN, JC
LANGEVIN, Y
MAURETTE, M
PETIT, JC
VASSENT, B
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期
关键词：
D O I：
10.1016/0029-554X(81)90804-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：741 / 746
页数：6
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