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- [1] AUGER RECOMBINATION RATES IN COMPRESSIVELY STRAINED INXGA1-XAS/INGAASP/INP (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.73) MULTIQUANTUM WELL LASERSIEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (02) : 120 - 122DAVIS, LLAM, YNICHOLS, DSINGH, JBHATTACHARYA, PK
- [2] MULTIPLE DISLOCATION LOOPS IN LINEARLY GRADED INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.53) ON GAAS AND INXGA1-XP (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.32) ON GAPAPPLIED PHYSICS LETTERS, 1993, 63 (04) : 500 - 502CHANG, JCPCHIN, TPTU, CWKAVANAGH, KL
- [3] INTERSUBBAND ABSORPTION IN STRAINED INXGA1-XAS/AL0.4GA0.6AS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.15) MULTIQUANTUM WELLSAPPLIED PHYSICS LETTERS, 1989, 54 (09) : 855 - 856ZHOU, XBHATTACHARYA, PKHUGO, GHONG, SCGULARI, E
- [4] HIGH-ENERGY ALXGA1-XAS (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.1) QUANTUM-WELL HETEROSTRUCTURE LASER OPERATIONAPPLIED PHYSICS LETTERS, 1982, 41 (04) : 317 - 319CAMRAS, MDHOLONYAK, NHESS, KCOLEMAN, JJBURNHAM, RDSCIFRES, DR
- [5] PHOTOLUMINESCENCE CHARACTERIZATION OF GAXIN1-XAS (0-LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.32) STRAINED QUANTUM-WELLS GROWN ON INP BY CHEMICAL BEAM EPITAXYJOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 357 - 361UCHIDA, TUCHIDA, TKYOKOUCHI, NMIYAMOTO, TKOYAMA, FIGA, K
- [6] THERMAL-STABILITY OF STRAINED ALGAAS/INXGA1-XAS (0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL STRUCTURESGALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 403 - 408YANG, MTLIN, RMCHAN, YJSHIEH, JLCHYI, JI
- [7] EFFECT OF STRAIN ON MICROWAVE NOISE CHARACTERISTICS IN IN0.52AL0.48AS/INXGA1-XAS (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.80) HEMTSELECTRONICS LETTERS, 1993, 29 (15) : 1338 - 1340CHOUGH, KBHONG, WPFLOREZ, LSONG, JI
- [8] SUB-HALF-MICROMETER PSEUDOMORPHIC INP/INXGA1-XAS/INP HEMT (0.74-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.81) WITH VERY HIGH F(T) VALUESIEEE ELECTRON DEVICE LETTERS, 1995, 16 (09) : 396 - 398KUSTERS, AMWULLER, RGEELEN, HJKOHL, AHEIME, K
- [9] DISLOCATION GENERATION MECHANISMS OF INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) EPILAYERS GROWN ON (100) INP SUBSTRATES BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1994, 75 (03) : 1511 - 1516CHANG, SZLEE, SCCHEN, CRCHEN, LJ