A XE MARKER STUDY OF THE TRANSFORMATION OF NI2SI TO NISI IN THIN-FILMS

被引:52
作者
FINSTAD, TG
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 63卷 / 01期
关键词
D O I
10.1002/pssa.2210630130
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:223 / 228
页数:6
相关论文
共 13 条
[1]  
Chu WK., 1978, BACKSCATTERING SPECT
[2]   SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES [J].
COE, DJ ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) :965-972
[3]   SILICIDE FORMATION WITH NICKEL AND PLATINUM DOUBLE-LAYERS ON SILICON [J].
FINSTAD, TG .
THIN SOLID FILMS, 1978, 51 (03) :411-424
[4]   FORMATION OF NISI FROM NI2SI STUDIED WITH A PLATINUM MARKER [J].
FINSTAD, TG ;
MAYER, JW ;
NICOLET, MA .
THIN SOLID FILMS, 1978, 51 (03) :391-394
[5]  
GHOZLENE HB, 1978, J APPL PHYS, V49, P3998, DOI 10.1063/1.325358
[6]   ARGON BUBBLE FORMATION IN SPUTTERING OF PTSI [J].
LIAU, ZL ;
SHENG, TT .
APPLIED PHYSICS LETTERS, 1978, 32 (11) :716-718
[7]   INFLUENCE OF NATURE OF SI SUBSTRATE ON NICKEL SILICIDE FORMED FROM THIN NI FILMS [J].
OLOWOLAFE, JO ;
NICOLET, MA ;
MAYER, JW .
THIN SOLID FILMS, 1976, 38 (02) :143-150
[8]  
PICAUX ST, 1974, APPLICATION ION BEAM
[9]   RADIOACTIVE SILICON AS A MARKER IN THIN-FILM SILICIDE FORMATION [J].
PRETORIUS, R ;
RAMILLER, CL ;
LAU, SS ;
NICOLET, MA .
APPLIED PHYSICS LETTERS, 1977, 30 (10) :501-503
[10]  
Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359