DIRECT OBSERVATION OF THE LAYER-BY-LAYER GROWTH OF INITIAL OXIDE LAYERS ON SI(100) SURFACE DURING THERMAL-OXIDATION

被引：40

作者：

BORMAN, VD

GUSEV, EP

LEBEDINSKII, YY

TROYAN, VI

机构：

[1] Moscow Engineering Physics Institute

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.67.2387

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present the results of an x-ray photoelectron spectroscopy investigation in the real-time regime of the kinetics of high-temperature oxidation of the Si(100) surface. The dependence of the net concentration of silicon atoms in all oxidation states (i.e., Si1+, Si2+, Si3+, Si4+) on oxygen exposure is found to exhibit a "step"-like behavior, each "step" corresponding to one oxide layer. The results obtained suggest a mechanism of layer-by-layer growth of initial oxide layers, with oxide-phase formation taking place at the Si-SiO2 interface.

引用

页码：2387 / 2390

页数：4

共 25 条

[1]

AOTO N, 1990, SURF SCI, V234, P121, DOI 10.1016/0039-6028(90)90671-T

[2] TRANSPORT PROCESSES DURING THE GROWTH OF OXIDE-FILMS AT ELEVATED-TEMPERATURE [J].