ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS

被引：54
作者：
BEMSKI, G
AUGUSTYNIAK, WM
机构：
来源：
PHYSICAL REVIEW | 1957年 / 108卷 / 03期
关键词：
D O I：
10.1103/PhysRev.108.645
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：645 / 648
页数：4
相关论文
共 11 条
[1]  
Brinkman JA, 1956, AM J PHYS, V24, P246, DOI [10.1119/1.1934201, DOI 10.1119/1.1934201]
[2]   RADIATION EFFECTS IN SOLIDS [J].
DIENES, GJ .
ANNUAL REVIEW OF NUCLEAR SCIENCE, 1953, 2 :187-220
[3]  
FAN HY, 1956, IRRADIATION SEMICOND
[4]  
FLETCHER RC, 1953, PHYS REV, V95, P585
[5]  
GLEN JW, 1956, ADV PHYSICS, V4, P318
[6]   TRANSIENT RESPONSE OF A P-N JUNCTION [J].
LAX, B ;
NEUSTADTER, SF .
JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) :1148-1154
[7]   ELECTRON VOLTAIC STUDY OF ELECTRON BOMBARDMENT DAMAGE AND ITS THRESHOLDS IN GE AND SI [J].
LOFERSKI, JJ ;
RAPPAPORT, P .
PHYSICAL REVIEW, 1955, 98 (06) :1861-1863
[8]  
Seitz F., 1956, SOLID STATE PHYS, P307
[9]  
Seitz F., 1952, PHYS TODAY, V5, P6, DOI [10.1063/1.3067657, DOI 10.1063/1.3067657]
[10]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842
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