OPTIMIZED FREQUENCY-CHARACTERISTICS OF SI/SIGE HETEROJUNCTION AND CONVENTIONAL BIPOLAR-TRANSISTORS

被引：12

作者：

KARLSTEEN, M ^{[1
]}

WILLANDER, M ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 02期

关键词：

D O I：

10.1016/0038-1101(90)90157-A

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The maximum oscillation frequency (fmax) and the unity current gain frequency (fτ) were calculated for both Si/Si1-x Gex heterojunction and conventional homojunction bipolar transistors. The frequency characteristics at different temperatures were compared by making calculations for 300 and 77 K. The frequency properties of both transistor types improved as the temperature decreased. However, the current gain of the Si/Si1-x Gex system increased with falling temperature while the current gain of the conventional transistor was constant. The Si/Si1-x Gex device would function at frequencies of up to 350 GHz at 77 K. The fmax calculations were made with a model derived for submicrometer heterojunction bipolar transistors. © 1990.

引用

页码：199 / 204

页数：6

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