RESIDUAL IMPURITIES IN HIGH-PURITY GAAS EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY

被引：7
|
作者：
MORKOC, H
EASTMAN, LF
WOODARD, D
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
来源：
THIN SOLID FILMS | 1980年 / 71卷 / 02期
关键词：
D O I：
10.1016/0040-6090(80)90161-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：245 / 248
页数：4
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