RESIDUAL IMPURITIES IN HIGH-PURITY GAAS EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY

被引：7

作者：

MORKOC, H

EASTMAN, LF

WOODARD, D

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

THIN SOLID FILMS | 1980年 / 71卷 / 02期

关键词：

D O I：

10.1016/0040-6090(80)90161-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：245 / 248

页数：4

共 9 条

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[4] DETERMINATION OF FERMI-LEVEL EFFECT ON SI-SITE DISTRIBUTION IN GAAS-SI [J].

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[5]

LIN AL, 1976, J APPL PHYS, V47, P1862

[6]

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[7] PURITY OF GAAS GROWN BY LPE IN A GRAPHITE BOAT [J].

MORKOC, H ;

EASTMAN, LF .

JOURNAL OF CRYSTAL GROWTH, 1976, 36 (01) :109-114

[8] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J].

STILLMAN, GE ;

WOLFE, CM .

THIN SOLID FILMS, 1976, 31 (1-2) :69-88

[9]

WHELAN JM, 1960, P INT C SEMICONDUCTO, P943

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