Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer

被引：0

作者：

Feng Jiangmei ^{[1
,2
]}

Shen Huajun ^{[2
]}

Ma Xiaohua ^{[1
]}

Bai Yun ^{[2
]}

Wu Jia ^{[3
]}

Li Chengzhan ^{[3
]}

Liu Kean ^{[3
]}

Liu Xinyu ^{[2
]}

机构：

[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[3] Zhuzhou CSR Times Elect Co Ltd, Zhuzhou 412001, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2016年 / 37卷 / 04期

关键词：

4H-SiC; carbon-implanted drift layer; PiN diodes; Z(1/2) defects;

D O I：

10.1088/1674-4926/37/4/044009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbon-implanted drift layer were around 3.3 V, which is lower than that of devices without carbon implantation, the specific-on resistance was decreased from 9.35 to 4.38 m Omega.cm(2) at 100 A/cm(2), and the reverse leakage current was also decreased. The influence of carbon incorporation in the SiC crystalline grids was studied by using deep-level transient spectroscopy (DLTS). The DLTS spectra revealed that the Z(1/2) traps, which were regarded as the main lifetime limiting defects, were dramatically reduced. It is proposed that the reduction of Z(1/2) traps can achieve longer carrier lifetime in the drift layer, which is beneficial to the performance of bipolar devices.

引用

页数：5

共 40 条

[31] An Improved ICP Etching for Mesa-Terminated 4H-SiC p-i-n Diodes
Han, Chao
Zhang, Yuming
Song, Qingwen
Zhang, Yimen
Tang, Xiaoyan
Yang, Fei
Niu, Yingxi
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (04) : 1223 - 1229
[32] Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes
Caldwell, Joshua D.
Stahlbush, Robert E.
Glembocki, Orest J.
Hobart, Karl D.
Liu, Kendrick X.
Tadjer, Marko J.
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 273 - +
[33] Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes
Hazdra, Pavel
Smrkovsky, Petr
Vobecky, Jan
Mihaila, Andrei
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (01) : 202 - 207
[34] Microwave p-i-n diodes fabricated on 4H-SiC material grown by sublimation epitaxy in vacuum
Camara, N.
Romanov, L. P.
Kirillov, An.
Boltovets, M. S.
Lebedev, A. A.
Zelenin, V. V.
Kayambaki, M.
Zekentes, K.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 933 - +
[35] Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC
Feng, Gan
Suda, Jun
Kimoto, Tsunenobu
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (02) : 414 - 418
[36] Analysis of a 4H-SiC Lateral PMOSFET Temperature Sensor Between 14 K-482 K
Rinaldi, Nicola
Rommel, Mathias
May, Alexander
Liguori, Rosalba
Rubino, Alfredo
Licciardo, Gian Domenico
Benedetto, Luigi Di
IEEE SENSORS LETTERS, 2025, 9 (03)
[37] Theoretical Analysis of ON-State Performance Limit of 4H-SiC IGBT in Field-Stop Technology
Luo, Peng
Madathil, Sankara Narayanan Ekkanath
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (12) : 5621 - 5627
[38] Single-Implant, Field Plate and Guard Rings Assist Multi-Zone Graded JTE for 4H-SiC p-i-n Diodes
Ding, Yang
Zhang, Li
Wang, Yan
Yue, Ruifeng
2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
[39] Detailed Analysis on Determining Effective Dose for Various JTE-Based Edge Terminations Utilized on 4H-SiC Power Devices
Yun, Nick
Sung, Woongje
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (07) : 3826 - 3832
[40] TWO-MESA, GUARD RINGS ASSISTED TWO-ZONE JTE FOR ULTRAHIGH-VOLTAGE(>10KV) 4H-SiC P-I-N DIODES
Ding, Yang
Yue, Ruifeng
Zhang, Li
Wang, Yan
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,

← 1 2 3 4 →