Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer

被引：0

作者：

Feng Jiangmei ^{[1
,2
]}

Shen Huajun ^{[2
]}

Ma Xiaohua ^{[1
]}

Bai Yun ^{[2
]}

Wu Jia ^{[3
]}

Li Chengzhan ^{[3
]}

Liu Kean ^{[3
]}

Liu Xinyu ^{[2
]}

机构：

[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[3] Zhuzhou CSR Times Elect Co Ltd, Zhuzhou 412001, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2016年 / 37卷 / 04期

关键词：

4H-SiC; carbon-implanted drift layer; PiN diodes; Z(1/2) defects;

D O I：

10.1088/1674-4926/37/4/044009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbon-implanted drift layer were around 3.3 V, which is lower than that of devices without carbon implantation, the specific-on resistance was decreased from 9.35 to 4.38 m Omega.cm(2) at 100 A/cm(2), and the reverse leakage current was also decreased. The influence of carbon incorporation in the SiC crystalline grids was studied by using deep-level transient spectroscopy (DLTS). The DLTS spectra revealed that the Z(1/2) traps, which were regarded as the main lifetime limiting defects, were dramatically reduced. It is proposed that the reduction of Z(1/2) traps can achieve longer carrier lifetime in the drift layer, which is beneficial to the performance of bipolar devices.

引用

页数：5

共 40 条

[1] Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer
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[2] Evaluation of termination techniques for 4H-SiC PiN diodes
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SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 925 - +
[3] Partial dislocations and stacking faults in 4H-SiC PiN diodes
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[4] Overlapping Shockley/Frank faults in 4H-SiC PiN diodes
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[5] Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method
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[7] Behaviour of 4H-SiC pin diodes studied by numerical device simulation
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[10] Stacking-fault formation and propagation in 4H-SiC PiN diodes
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