RADIATIVE AND NONRADIATIVE RECOMBINATION AT NEUTRAL OXYGEN IN P TYPE GAP

被引：51
作者：
DISHMAN, JM
机构：
来源：
PHYSICAL REVIEW B-SOLID STATE | 1971年 / 3卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.3.2588
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：2588 / +
页数：1
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共 38 条
[1]  
AFROMOWITZ MA, UNPUBLISHED
[2]   APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J].
BEBB, HB .
PHYSICAL REVIEW, 1969, 185 (03) :1116-&
[3]   POSSIBLE MECHANISM FOR RADIATIONLESS RECOMBINATION IN SEMICONDUCTORS [J].
BESS, L .
PHYSICAL REVIEW, 1957, 105 (05) :1469-1475
[4]   RADIATIVE CAPTURE BY IMPURITIES IN SEMICONDUCTORS [J].
BLAKEMORE, JS .
PHYSICAL REVIEW, 1967, 163 (03) :809-+
[5]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[6]   RECOMBINATION MECHANISMS [J].
BONCH-BRUEVICH, VL ;
LANDSBERG, EG .
PHYSICA STATUS SOLIDI, 1968, 29 (01) :9-+
[7]  
BONCH-BRUEVICH VL, 1957, SOV PHYS JETP-USSR, V5, P894
[8]  
BONCHBRUEVICH VL, 1957, ZH EKSP TEOR FIZ, V32, P1092
[9]   VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].
CASEY, HC ;
ERMANIS, F ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+
[10]   TEMPERATURE-DEPENDENT RADIATIVE RECOMBINATION MECHANISMS IN GAP(ZN,O) AND GAP(CD,O) [J].
CUTHBERT, JD ;
HENRY, CH ;
DEAN, PJ .
PHYSICAL REVIEW, 1968, 170 (03) :739-+
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