AUGER-ELECTRON SPECTROSCOPY AS A METHOD OF SURFACE-POTENTIAL BARRIER STUDY

Surface cathodo-electromotive force effect was detected and studied using Auger electron spectroscopy in a group of the most common semiconductors (Si, GaAs, InP) of both n- and p-type conductivity. The nature of the effect consists of surface potential barrier changes under electron bombardment. Auger electron energy dependencies on primary beam energy and current are investigated on ion beam sputtered surfaces. Auger line position differences between n- and p-type semiconductors are shown to be zero at low primary beam energy and current and to saturate at high ones. The difference between high and low excitation limits of Auger line position is shown to characterize the sign and height of the initial valence and conduction band bendings. Possible mechanisms of the electromotive force, including electric field separation of the carriers and ballistic effects, are discussed. © 1990, American Vacuum Society. All rights reserved.