Improved Simulation of Spice 2 Zener Diode Characteristics

被引：0

作者：

Kumar, Umesh ^{[1
]}

机构：

[1] IIT, Dept Elect Engn, Hauz Khas, New Delhi, India

来源：

JOURNAL OF ACTIVE AND PASSIVE ELECTRONIC DEVICES | 2009年 / 4卷 / 03期

关键词：

Simulation; Zener Diode; Device Modeling; Spice Model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Improvements are made to the reverse low current leakage region characteristics of SPICE 2 compatible zener diode model. The proposed model has been implemented in SPICE 2 and simulation results are presented. These results show the potential for improved integrated circuit simulation reliability due to the extended capability of the Zener diode model.

引用

页码：265 / 269

页数：5