PRACTICAL TECHNIQUE FOR CONTROLLING FIELD PROFILE IN THIN-LAYERS OF N-GAAS

被引：5
作者：
DEAN, RH
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 11期
关键词：
D O I：
10.1109/T-ED.1972.17566
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1144 / +
页数：1
相关论文
共 23 条
[1]   EMITTER CONTROLLED NEGATIVE RESISTANCE IN GAAS [J].
ATALLA, MM ;
MOLL, JL .
SOLID-STATE ELECTRONICS, 1969, 12 (08) :619-&
[2]   LATERAL CAPACITIVE PROBING OF AN ANODE-LOADED EPITAXIAL COPLANAR GALLIUM-ARSENIDE DIODE [J].
BOCCONGI.D ;
TESZNER, JL .
ELECTRONICS LETTERS, 1971, 7 (16) :469-&
[3]   EXPERIMENTAL EVIDENCE OF BISTABLE SWITCHING IN A GUNN EPITAXIAL COPLANAR DIODE BY ANODE-SURFACE LOADING [J].
BOCCONGI.D ;
TESZNER, JL .
ELECTRONICS LETTERS, 1971, 7 (16) :468-&
[4]   FIELD PROFILE IN GAAS LAYER BIASED ABOVE TRANSFERRED-ELECTRON THRESHOLD [J].
DEAN, RH ;
SCHWARTZ, PM .
SOLID-STATE ELECTRONICS, 1972, 15 (04) :417-+
[5]   OPTIMUM DESIGN OF THIN-LAYER GAAS AMPLIFIERS [J].
DEAN, RH .
PROCEEDINGS OF THE IEEE, 1969, 57 (07) :1327-+
[6]   REFLECTION AMPLIFICATION IN THIN-LAYERS OF N-GAAS [J].
DEAN, RH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) :1148-+
[7]   TRAVELLING-WAVE AMPLIFIER USING THIN EPITAXIAL GAAS LAYER [J].
DEAN, RH ;
DREEBEN, AB ;
KAMINSKI, JF ;
TRIANO, A .
ELECTRONICS LETTERS, 1970, 6 (24) :775-+
[8]   COUPLING BETWEEN SLOW WAVES AND CONVECTIVE INSTABILITIES IN SOLIDS [J].
HAMMER, JM .
APPLIED PHYSICS LETTERS, 1967, 10 (12) :358-+
[9]   WIDEBAND PERFORMANCE OF INJECTION-LIMITED GUNN DIODE [J].
HARIU, T ;
ONO, S ;
SHIBATA, Y .
ELECTRONICS LETTERS, 1970, 6 (21) :666-&
[10]   INCLUSION OF DIFFUSION IN SPACE-CHARGE THEORY OF KINO AND ROBSON [J].
HEINLE, W .
ELECTRONICS LETTERS, 1971, 7 (10) :245-&
123