WATER COOLED SILICON-CRYSTALS FOR X-RAY MONOCHROMATORS

被引:3
|
作者
WAHL, R [1 ]
SHAH, R [1 ]
JACKSON, K [1 ]
TONNESSEN, T [1 ]
机构
[1] ROCKWELL INT CORP, ROCKWELL POWER SYST, ALBUQUERQUE, NM 87107 USA
关键词
D O I
10.1016/0168-9002(92)91185-C
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Insertion devices (wigglers and undulators) Proposed for synchrotron radiation sources will produce up to 10 kW/cm2 of thermal loading. In a double crystal monochromator, the first crystal must absorb nearly all of this output power, as it diffracts the desired wavelength to the second crystal. Storage rings currently projected or under construction produce heat loads of this intensity and thus require significantly improved optical element cooling methods ro preserve the spectral quality of the output radiation. As beam intensities reach these higher levels, analysis of the thermal performance of passive and actively cooled optical elements becomes more and more critical because such elements are a cost effective means for producing a cooled crystal that performs to its design specifications the first time it is installed in the beamline. The Rocketdyne Division of Rockwell International is applying the experience gained in high energy laser optics research (the design of cooled IR and UV optical components for free electron lasers) to the problems of cooled X-ray monochromator crystals and grazing incidence VUV optics. In this paper, a set of first order parametric calculations and a second order finite element calculation were performed to determine surface temperature rise, coolant pressure drop and surface distortion in a single crystal silicon heat exchanger with heat loads of 100 to 550 W/cm2. Two different heat exchanger designs (microchannels and pin post cell) and two different coolants (water and liquid gallium) were analyzed to assess performance advantages of each.
引用
收藏
页码:908 / 913
页数:6
相关论文
共 50 条
  • [41] BENT CRYSTAL X-RAY MONOCHROMATORS
    WARREN, BE
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1950, 21 (01): : 102 - 102
  • [42] PRESERVING THE HIGH FINESSE OF X-RAY UNDULATOR BEAMS FROM PERFECT WATER-JET-COOLED DIAMOND MONOCHROMATORS
    BERMAN, LE
    HART, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 334 (2-3): : 617 - 620
  • [43] MONOCHROMATORS FOR X-RAY SYNCHROTRON RADIATION
    CACIUFFO, R
    MELONE, S
    RUSTICHELLI, F
    BOEUF, A
    PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1987, 152 (01): : 1 - 71
  • [44] Etching of diamonds for x-ray monochromators
    Maj, JA
    Macrander, AT
    Krasnicki, SF
    Fernandez, PB
    Erck, RA
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2002, 73 (03): : 1546 - 1549
  • [45] X-RAY-MEASUREMENT OF MINUTE LATTICE STRAIN IN PERFECT SILICON-CRYSTALS
    BONSE, U
    HARTMANN, I
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1981, 156 (3-4): : 265 - 279
  • [46] A SOFT-X-RAY-EMISSION INVESTIGATION OF COBALT IMPLANTED SILICON-CRYSTALS
    JIA, JJ
    CALLCOTT, TA
    OBRIEN, WL
    DONG, QY
    MUELLER, DR
    RUBENSSON, JE
    EDERER, DL
    TAN, Z
    NAMAVAR, F
    BUDNICK, JI
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) : 7800 - 7804
  • [47] NEW ORGANIC-CRYSTALS AS X-RAY MONOCHROMATORS - TRIPHENYLBENZENE AND THALLIUM TARTRATE
    CHARBONNIER, M
    ROMAND, M
    GRUBIS, B
    X-RAY SPECTROMETRY, 1988, 17 (04) : 149 - 154
  • [48] Contact-cooled U-monochromators for high heat load x-ray beamlines
    Khounsary, A
    Yun, W
    Trakhtenberg, E
    Xu, S
    Assoufid, L
    Lee, WK
    HIGH HEAT FLUX ENGINEERING III, 1996, 2855 : 232 - 239
  • [49] INSITU X-RAY TOPOGRAPHIC STUDIES OF THE GENERATION AND THE MULTIPLICATION PROCESSES OF DISLOCATIONS IN SILICON-CRYSTALS AT ELEVATED-TEMPERATURES
    SUMINO, K
    HARADA, H
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (06): : 1319 - 1334
  • [50] X-RAY AND ELECTRON-MICROSCOPY STUDIES OF ARSENIUM IMPLANTED SILICON-CRYSTALS AFTER A PULSED LASER ANNEALING
    BRYZA, B
    AULEYTNER, J
    BARTSCH, H
    WIETESKA, K
    CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (02) : 173 - 177