PARTIALLY HOMOGENEOUS BROADENING AND SATURATION IN SEMICONDUCTOR-LASERS

被引：1

作者：

GAMO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：403 / 409

页数：7

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