VAPOR-GROWN 1.3 MU-M INGAASP-INP AVALANCHE PHOTO-DIODES

被引：30
作者：
OLSEN, GH
KRESSEL, H
机构：
[1] RCA Laboratories, Princeton
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 05期
关键词：
Avalanche photodiodes; III–V semiconductors; Vapour-phase epitaxial growth;
D O I：
10.1049/el:19790100
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel planar InGaAsP/InP avalanche photodiode structure prepared by vapour-phase epitaxy is described. Avalanche gain up to 20 at 1.3 µm and at reverse breakdown of 65 V has been measured.© 1979, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：141 / 142
页数：2
相关论文
共 7 条
[1]   AVALANCHE BREAKDOWN VOLTAGES FOR III-V SEMICONDUCTORS [J].
HAUSER, JR .
APPLIED PHYSICS LETTERS, 1978, 33 (04) :351-353
[2]  
HURWITZ CE, 1978, APPL PHYS LETT, V32, P488
[3]  
KRESSEL H, 1978, J APPL PHYS, V49, P3140, DOI 10.1063/1.325307
[4]   MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].
MCINTYRE, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+
[5]  
OLSEN GH, 1978, DAAB0776C0872 ERADCO
[6]  
OLSEN GH, UNPUBLISHED
[7]   INGAASP-INP AVALANCHE PHOTO-DIODE [J].
TAKANASHI, Y ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) :2065-2066
1