PREPARATION AND SWITCHING KINETICS OF PB(ZR, TI)O3 THIN-FILMS DEPOSITED BY REACTIVE SPUTTERING

被引：73
|
作者：
HASE, T [1 ]
SHIOSAKI, T [1 ]
机构：
[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,MRC,KYOTO 606,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9B期
关键词：
PZT; REACTIVE SPUTTERING; METAL COMPOSITE TARGET; SWITCHING; FATIGUE EFFECT;
D O I：
10.1143/JJAP.30.2159
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ferroelectric Pb(Zr, Ti)O3[PZT] thin films have been prepared on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT(80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595-degrees-C on highly (111)-oriented Pt films formed on SiO2/Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50 x 50-mu-m2, the switching time and the switched charge density measured were 20 ns and 10-mu-C/cm2, respectively. The switching time was strongly dependent on the electrode area.
引用
收藏
页码：2159 / 2162
页数：4
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