PREPARATION AND SWITCHING KINETICS OF PB(ZR, TI)O3 THIN-FILMS DEPOSITED BY REACTIVE SPUTTERING

Ferroelectric Pb(Zr, Ti)O3[PZT] thin films have been prepared on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT(80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595-degrees-C on highly (111)-oriented Pt films formed on SiO2/Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50 x 50-mu-m2, the switching time and the switched charge density measured were 20 ns and 10-mu-C/cm2, respectively. The switching time was strongly dependent on the electrode area.