PREPARATION AND SWITCHING KINETICS OF PB(ZR, TI)O3 THIN-FILMS DEPOSITED BY REACTIVE SPUTTERING

被引：73

作者：

HASE, T ^{[1
]}

SHIOSAKI, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,MRC,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9B期

关键词：

PZT; REACTIVE SPUTTERING; METAL COMPOSITE TARGET; SWITCHING; FATIGUE EFFECT;

D O I：

10.1143/JJAP.30.2159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric Pb(Zr, Ti)O3[PZT] thin films have been prepared on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT(80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595-degrees-C on highly (111)-oriented Pt films formed on SiO2/Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50 x 50-mu-m2, the switching time and the switched charge density measured were 20 ns and 10-mu-C/cm2, respectively. The switching time was strongly dependent on the electrode area.

引用

页码：2159 / 2162

页数：4

共 7 条

[1] SAW PROPERTIES OF PLZT EPITAXIAL THIN-FILMS [J].