AN XPS STUDY OF THE INITIAL-STAGES OF OXIDATION OF HAFNIUM

被引：121
作者：
MORANT, C
GALAN, L
SANZ, JM
机构：
[1] Departamento de Física Aplicada, Universidad Autónoma de Madrid, Madrid
来源：
SURFACE AND INTERFACE ANALYSIS | 1990年 / 16卷 / 1-12期
关键词：
D O I：
10.1002/sia.740160163
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The oxidation kinetics of polycrystalline hafnium (Hf) at room temperature and low oxygen pressure (Po2 ∼ 10−7 Torr) has been studied by x‐ray photoelectron spectroscopy (XPS). After a chemisorption stage for exposures ⩽ 5 L, Hf suboxides are initially formed and are dominant until ∼ 25 L. HfO2 appears at ∼ 10 L. Above 25 L, HfO2 grows by oxidation of the suboxides, whereas the oxide film thickness remains constant. Above 500 L, a saturation region is observed that corresponds to an oxide layer of 12 Å thick with an average composition HfO1.8. Copyright © 1990 John Wiley & Sons Ltd.
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页码：304 / 308
页数：5
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