共 50 条
- [21] CORROSION-INDUCED SURFACE-STATES ON N-GAAS AS STUDIED BY PHOTOLUMINESCENCE VERSUS VOLTAGE SCANS AND LUMINESCENCE DECAYSJOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (35): : 9002 - 9008BALKO, BARICHMOND, GL
- [22] CORROSION-INDUCED SURFACE-STATES ON N-GAAS AS STUDIED BY PHOTOLUMINESCENCE VERSUS VOLTAGE SCANS AND LUMINESCENCE DECAYSABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1993, 205 : 262 - COLLBALKO, BARICHMOND, GL
- [23] CORROSION-INDUCED SURFACE-STATES ON N-GAAS AS STUDIED BY PHOTOLUMINESCENCE VERSUS VOLTAGE SCANS AND LUMINESCENCE DECAYSABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1993, 205 : 297 - COLLBALKO, BARICHMOND, GL
- [24] Simulation of kinetics of water temperature-programmed desorption from n-GaAs(100) and n-GaP(100) semiconductor surfacesTechnical Physics, 2009, 54 : 704 - 711E. D. Skutin
- [26] SURFACE EFFECTS IN SEM MEASUREMENTS OF HOLE DIFFUSION LENGTH IN N-GAASJOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (04) : 493 - 499PARTIN, DLMILNES, AGVASSAMILLET, LF
- [27] CAPACITY MEASUREMENTS AND THE ENERGY-DISTRIBUTION OF SURFACE-STATES AT THE ELECTROLYTE-GAAS INTERFACEJOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1980, 106 (1-2) : 23 - 33JANIETZ, PWEICHE, RWESTFAHL, JLANDSBERG, RDEHMLOW, R
- [28] KINETIC AND STATIONARY CHARACTERISTICS OF N-GAAS PHOTOLUMINESCENCE AT VARIOUS SURFACE STATESIZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1974, 38 (06): : 1291 - 1293ZUEV, VAKORBUTYAK, DVLITOVCHENKO, VGSUKACH, GA
- [29] Determination of the fractal dimension for the epitaxial n-GaAs surface in the local limitSEMICONDUCTORS, 2009, 43 (01) : 33 - 41Torkhov, N. A.Bozhkova, V. G.Ivonin, I. V.Novikov, V. A.
- [30] Determination of the fractal dimension for the epitaxial n-GaAs surface in the local limitSemiconductors, 2009, 43 : 33 - 41N. A. TorkhovV. G. BozhkovaI. V. IvoninV. A. Novikov