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- [1] DETERMINATION OF SURFACE-STATES DENSITY ON N-GAAS, N-GAAS1-XPX AND N-GAP IN AQUEOUS-ELECTROLYTES BY MEASUREMENTS OF CAPACITY UNDER ILLUMINATION ZEITSCHRIFT FUR CHEMIE, 1979, 19 (10): : 385 - 386
- [4] ELECTROREFLECTANCE OF n-GaP AND n-GaAs EPITAXIAL FILMS UKRAINIAN JOURNAL OF PHYSICS, 2006, 51 (07): : 680 - 685
- [5] STUDIES ON THE N-GAAS PHOTOANODE IN AQUEOUS-ELECTROLYTES .3. RECOMBINATION RESISTANCE BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1986, 90 (05): : 431 - 434
- [6] RUTHENIUM-INDUCED SURFACE-STATES ON N-GAAS SURFACES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 485 - 492
- [8] STUDIES ON THE N-GAAS PHOTOANODE IN AQUEOUS-ELECTROLYTES .2. DIFFERENTIAL CAPACITANCE BEHAVIOR BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1985, 89 (09): : 994 - 998
- [9] STUDIES ON THE N-GAAS PHOTOANODE IN AQUEOUS-ELECTROLYTES .1. BEHAVIOR OF THE PHOTOCURRENT IN THE PRESENCE OF A STABILIZING AGENT BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1985, 89 (09): : 987 - 994