TIME-DIFFERENTIAL PERTURBED-ANGULAR-CORRELATION STUDY OF IN-111 CD-111 IN III-V COMPOUNDS

The hyperfine interactions of Cd111 in GaP, GaAs, GaSb, AlSb, and InSb were determined by means of the time-differential perturbed-angular-correlation technique. Doping with Cd111 was achieved by ion implantation of the parent radioactive atom In111. After removal of radiation damage by thermal annealing the hyperfine interactions were studied in the temperature range 20-300 K. The results are compared with those of similar experiments recently reported for diamond-structure semiconductors and are also explained in terms of a distorted configuration of atoms surrounding the probe ion where holes may be bound. In addition, radiation-damage characteristics, thermal-annealing behavior, evidence of nonstoichiometry in GaSb, and the temperature dependence of the quadrupole interaction of probes in both gallium- and antimony-rich phases are discussed. © 1990 The American Physical Society.