EFFECT OF BASE DOPING GRADIENTS ON THE ELECTRICAL PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：4

作者：

MOHAMMAD, SN ^{[1
]}

CHEN, J ^{[1
]}

CHYI, JI ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 05期

关键词：

D O I：

10.1063/1.103667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy with nonuniform doping in the base region have been studied. Experimental measurements indicate that an optimization of the base doping leads to substantial improvement in the current gain and related properties. Unequal variations of the band-gap narrowing effect and Fermi-Dirac statistics effect seem to underlie this improvement. It is found that, in general, the higher the nonuniformity of the base doping, the lower is the offset voltage of the HBT.

引用

页码：463 / 465

页数：3

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