BAND-STRUCTURE AND ELECTRONIC PROPERTIES OF PURE AND HEAVILY DOPED POLYACETYLENE

被引：0

|

作者：

FINCHER, CR ^{[1
]}

LAUCHLAN, L ^{[1
]}

OZAKI, M ^{[1
]}

PEEBLES, D ^{[1
]}

TANAKA, M ^{[1
]}

HEEGER, AJ ^{[1
]}

MACDIARMID, AG ^{[1
]}

机构：

[1] UNIV PENN,PHILADELPHIA,PA 19174

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1979年 / 24卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：327 / 327

页数：1

相关论文

共 50 条

[41] ELECTRONIC BAND-STRUCTURE OF NIOBIUM NITRIDE
MATTHEISS, LF
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 315 - +
[42] ELECTRONIC BAND-STRUCTURE METHODS FOR XAS
ALBERS, RC
PHYSICA B, 1989, 158 (1-3): : 372 - 374
[43] ELECTRONIC BAND-STRUCTURE OF FERROELECTRIC HCL
BLUMEN, A
MERKEL, C
CHEMICAL PHYSICS LETTERS, 1977, 45 (01) : 47 - 49
[44] THE ELECTRONIC BAND-STRUCTURE PARAMETERS OF PBS
KARCZEWSKI, G
VONORTENBERG, M
ACTA PHYSICA POLONICA A, 1986, 69 (06) : 1083 - 1086
[45] Electronic band-structure methods for XAS
Albers, R.C., 1600, (158): : 1 - 3
[46] ELECTRONIC-STRUCTURE OF FERROMAGNETIC IRON - BAND-STRUCTURE AND OPTICAL-PROPERTIES
NAUTIYAL, T
AULUCK, S
PHYSICAL REVIEW B, 1986, 34 (04): : 2299 - 2305
[47] TRANSPORT PROPERTIES OF HEAVILY ASF5 DOPED POLYACETYLENE
KWAK, JF
CLARKE, TC
GREENE, RL
STREET, GB
SOLID STATE COMMUNICATIONS, 1979, 31 (05) : 355 - 358
[48] Electronic- and band-structure evolution in low-doped (Ga,Mn)As
Yastrubchak, O.
Sadowski, J.
Krzyzanowska, H.
Gluba, L.
Zuk, J.
Domagala, J. Z.
Andrearczyk, T.
Wosinski, T.
JOURNAL OF APPLIED PHYSICS, 2013, 114 (05)
[49] Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP
Zhang, Y
Fluegel, B
Hanna, M
Duda, A
Mascarenhas, A
PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 2002, 692 : 49 - 60
[50] BAND-STRUCTURE AND ELECTRONIC-PROPERTIES OF NATIVE DEFECTS IN CUBIC SIC
LI, Y
LINCHUNG, PJ
PHYSICAL REVIEW B, 1987, 36 (02) : 1130 - 1135

← 1 2 3 4 5 →