GATE BIAS POLARITY DEPENDENCE OF CHARGE TRAPPING AND TIME-DEPENDENT DIELECTRIC-BREAKDOWN IN NITRIDED AND REOXIDIZED NITRIDED OXIDES

被引：28

作者：

WU, AT ^{[1
]}

MURALI, V ^{[1
]}

NULMAN, J ^{[1
]}

TRIPLETT, B ^{[1
]}

FRASER, DB ^{[1
]}

GARNER, M ^{[1
]}

机构：

[1] AG ASSOCIATES,SUNNYVALE,CA 94089

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 10期

关键词：

D O I：

10.1109/55.43094

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：443 / 445

页数：3

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