IMPROVEMENT OF SIO2 SI INTERFACE PROPERTIES UTILIZING FLUORINE ION-IMPLANTATION AND DRIVE-IN DIFFUSION

被引：24

作者：

OHYU, K

ITOGA, T

NISHIOKA, Y

NATSUAKI, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 06期

关键词：

D O I：

10.1143/JJAP.28.1041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1041 / 1045

页数：5

相关论文

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