MOLECULAR-BEAM EPITAXY OF GASB AND GASBXAS1-X

被引：58

作者：

YANO, M

SUZUKI, Y

ISHII, T

MATSUSHIMA, Y

KIMATA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 12期

关键词：

D O I：

10.1143/JJAP.17.2091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2091 / 2096

页数：6

共 15 条

[1] LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER [J].

ANTYPAS, GA ;

JAMES, LW .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2165-&

[2] SHEET RESISTIVITY OF EPITAXIALLY GROWN GERMANIUM LAYER [J].

ARIZUMI, T ;

NISHINAGA, T ;

KAKEHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (05) :468-+

[3] ION-PAIRING BETWEEN LITHIUM AND RESIDUAL ACCEPTORS IN GASB [J].

BAXTER, RD ;

BATE, RT ;

REID, FJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (01) :41-&

[4] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].

CHANG, CA ;

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761

[5]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] MOLECULAR BEAM EPITAXY AND OPTICAL EVALUATION OF A1XGA1-XAS [J].

CHO, AY ;

STOKOWSK, SE .

SOLID STATE COMMUNICATIONS, 1971, 9 (09) :565-&

[7] INVESTIGATION INTO APPARENT PURITY LIMIT IN GASB [J].

EFFER, D ;

ETTER, PJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (05) :451-&

[8] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].

EHRENREICH, H .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2155-&

[9] MOLECULAR-BEAM EPITAXY OF GAP AND GAAS1-XPX [J].

MATSUSHIMA, Y ;

GONDA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (11) :2093-2101

[10] GROWTH AND PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS1-XSBX [J].

NAHORY, RE ;

POLLACK, MA ;

DEWINTER, JC ;

WILLIAMS, KM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1607-1614

← 1 2 →