EXPERIMENTAL AND THEORETICAL DETERMINATION OF HOT-ELECTRON DISTRIBUTION IN GAAS AND RELATED MIXED-CRYSTALS

被引：14

作者：

INOUE, M

TAKENAKA, N

SHIRAFUJI, J

INUISHI, Y

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 01期

关键词：

D O I：

10.1016/0038-1101(78)90111-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：29 / 33

页数：5

共 20 条

[1]

ADAMS AR, 1977, ELECTRON LETT, V13, P47

[2] ENERGY RELAXATION EFFECT OF HOT-ELECTRONS IN GAAS [J].

ASHIDA, K ;

INOUE, M ;

SHIRAFUJI, J ;

INUISHI, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 37 (02) :408-414

[3] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343

[4]

BAUER G, 1974, SPRINGER TRACTSIN MO, P74

[5] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J].

BUTCHER, PN ;

FAWCETT, W .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P) :1205-&

[6] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICAL REVIEW, 1968, 166 (03) :797-+

[7] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J].

EAGLES, DM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :76-83

[8] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[9] TEMPERATURE DEPENDENCE OF VELOCITY-FIELD CHARACTERISTIC IN N-TYPE GAAS [J].

INOUE, M ;

INUISHI, Y ;

SHIRAFUJI, J ;

NAKADE, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (04) :1010-+

[10]

KRANZER D, 1972, ACTA PHYS AUSTRIACA, V35, P110

← 1 2 →