OXIDE PASSIVATION OF PHOTOCHEMICALLY UNPINNED GAAS

被引：27

作者：

KIRCHNER, PD

WARREN, AC

WOODALL, JM

WILMSEN, CW

WRIGHT, SL

BAKER, JM

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 07期

关键词：

D O I：

10.1149/1.2096139

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1822 / 1824

页数：3

共 12 条

[1] PICOSECOND TRANSIENT REFLECTIVITY OF UNPINNED GALLIUM-ARSENIDE (100) SURFACES [J].

BECK, SM ;

WESSEL, JE .

APPLIED PHYSICS LETTERS, 1987, 50 (03) :149-151

[2] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].

HASEGAWA, H ;

HARTNAGEL, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723

[3] UNPINNING OF THE FERMI LEVEL ON GAAS BY FLOWING WATER [J].

IVES, NA ;

STUPIAN, GW ;

LEUNG, MS .

APPLIED PHYSICS LETTERS, 1987, 50 (05) :256-258

[4] EFFECT OF RUTHENIUM IONS ON GRAIN-BOUNDARIES IN GALLIUM-ARSENIDE THIN-FILM PHOTO-VOLTAIC DEVICES [J].

JOHNSTON, WD ;

LEAMY, HJ ;

PARKINSON, BA ;

HELLER, A ;

MILLER, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :90-95

[5]

KIRCHNER PD, 1986, JUN EL MAT C AMH

[6] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE EFFECTS OF ULTRAPURE WATER ON GAAS [J].

MASSIES, J ;

CONTOUR, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1150-1152

[7] UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY [J].

OFFSEY, SD ;

WOODALL, JM ;

WARREN, AC ;

KIRCHNER, PD ;

CHAPPELL, TI ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :475-477

[8] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

SANDROFF, CJ ;

NOTTENBURG, RN ;

BISCHOFF, JC ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35

[9]

Van Muylder J, 1974, ATLAS ELECTROCHEMICA, P516

[10] ARE THEY REALLY SCHOTTKY BARRIERS AFTER ALL [J].

WOODALL, JM ;

FREEOUF, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :574-576

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