Advances and prospects in nitrides based light-emitting-diodes

被引：40
作者：
Li Jinmin [1 ,2 ,3 ]
Liu Zhe [1 ,2 ,3 ]
Liu Zhiqiang [1 ,2 ,3 ]
Yan Jianchang [1 ,2 ,3 ]
Wei Tongbo [1 ,2 ,3 ]
Yi Xiaoyan [1 ,2 ,3 ]
Wang Junxi [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
[2] State Key Lab Solid State Lighting, Beijing 100083, Peoples R China
[3] Beijing Engn Res Ctr 3rd Generat Semicond Mat & A, Beijing 100083, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2016年 / 37卷 / 06期
基金：
国家高技术研究发展计划(863计划);
关键词：
nitrides; light-emitting-diodes; MOCVD; multiple-quantum-well; p-doping;
D O I：
10.1088/1674-4926/37/6/061001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Due to their low power consumption, long lifetime and high efficiency, nitrides based white light-emitting-diodes (LEDs) have long been considered to be a promising technology for next generation illumination. In this work, we provide a brief review of the development of GaN based LEDs. Some pioneering and significant experiment results of our group and the overview of the recent progress in this field are presented. We hope it can provide some meaningful information for the development of high efficiency GaN based LEDs and solid-state-lighting.
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页数：14
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