MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS

被引：326
作者：
HORIKOSHI, Y
KAWASHIMA, M
YAMAGUCHI, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1988年 / 27卷 / 02期
关键词：
D O I：
10.1143/JJAP.27.169
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：169 / 179
页数：11
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