MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS

被引：328

作者：

HORIKOSHI, Y

KAWASHIMA, M

YAMAGUCHI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1988年 / 27卷 / 02期

关键词：

D O I：

10.1143/JJAP.27.169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：169 / 179

页数：11

共 28 条

[1]

BRIONES F, 1986, 4TH P INT C MOL BEAM, P19

[2]

DOI A, 1986, APPL PHYS LETT, V48, P1787, DOI 10.1063/1.96787

[3] DOPING OF GALLIUM-ARSENIDE IN A LOW-PRESSURE ORGANOMETALLIC CVD SYSTEM .2. HYDROGEN-SULFIDE [J].

FIELD, RJ ;

GHANDHI, SK .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) :551-558

[4] OBSERVATIONS ON BAYARD-ALPERT ION GAUGE SENSITIVITIES TO VARIOUS GASES [J].

FLAIM, TA ;

OWNBY, PD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :661-&

[5] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1977, 64 (01) :293-304

[6]

FUKUNAGA T, 1985, 2ND P INT YAM C MOD, P316

[7]

GOLDSTEIN L, 1983, JPN J APPL PHYS, V22, P1491

[8]

HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

[9] LOW-THRESHOLD CONTINUOUS LASER OPERATION (300-337-DEGREES-K) OF MULTILAYER MO-CVD ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].

HOLONYAK, N ;

KOLBAS, RM ;

LAIDIG, WD ;

VOJAK, BA ;

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :737-739

[10] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L868-L870

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