MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS

[1] BRIONES F, 1986, 4TH P INT C MOL BEAM, P19

[2] DOI A, 1986, APPL PHYS LETT, V48, P1787, DOI 10.1063/1.96787

[3] DOPING OF GALLIUM-ARSENIDE IN A LOW-PRESSURE ORGANOMETALLIC CVD SYSTEM .2. HYDROGEN-SULFIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) : 551 - 558

[4] OBSERVATIONS ON BAYARD-ALPERT ION GAUGE SENSITIVITIES TO VARIOUS GASES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05): : 661 - &

[5] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J]. SURFACE SCIENCE, 1977, 64 (01) : 293 - 304

[6] FUKUNAGA T, 1985, 2ND P INT YAM C MOD, P316

[7] GOLDSTEIN L, 1983, JPN J APPL PHYS, V22, P1491

[8] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

[9] LOW-THRESHOLD CONTINUOUS LASER OPERATION (300-337-DEGREES-K) OF MULTILAYER MO-CVD ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 737 - 739

[10] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870

[1] BRIONES F, 1986, 4TH P INT C MOL BEAM, P19

[2] DOI A, 1986, APPL PHYS LETT, V48, P1787, DOI 10.1063/1.96787

[3] DOPING OF GALLIUM-ARSENIDE IN A LOW-PRESSURE ORGANOMETALLIC CVD SYSTEM .2. HYDROGEN-SULFIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) : 551 - 558

[4] OBSERVATIONS ON BAYARD-ALPERT ION GAUGE SENSITIVITIES TO VARIOUS GASES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05): : 661 - &

[5] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J]. SURFACE SCIENCE, 1977, 64 (01) : 293 - 304

[6] FUKUNAGA T, 1985, 2ND P INT YAM C MOD, P316

[7] GOLDSTEIN L, 1983, JPN J APPL PHYS, V22, P1491

[8] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

[9] LOW-THRESHOLD CONTINUOUS LASER OPERATION (300-337-DEGREES-K) OF MULTILAYER MO-CVD ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 737 - 739

[10] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870