HILLOCK REDUCTION IN ION-IMPLANTED METAL

被引:4
|
作者
HOLLAND, OW
ALVIS, JR
机构
关键词
D O I
10.1149/1.2100810
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2017 / 2019
页数:3
相关论文
共 50 条
  • [41] ANODIC POLARIZATION STUDIES OF SOME ION-IMPLANTED METAL-SURFACES
    CHEN, QM
    CHEN, HM
    BAI, XD
    ZHANG, JZ
    WANG, HH
    LI, HD
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 867 - 871
  • [42] TEM EVALUATION OF ION-IMPLANTED AND FATIGUED METAL-SURFACE LAYERS
    WANG, JJ
    WELSCH, G
    BAKHRU, H
    MASHAYEKHI, A
    GIBSON, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 228 - 234
  • [43] THE INFLUENCE OF TEMPERATURE ON THE PERFORMANCE OF ION-IMPLANTED METAL-FORMING TOOLS
    BALLHAUSE, P
    WOLF, GK
    WEIST, C
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1989, 115 : 273 - 277
  • [44] ION-IMPLANTATION AND POTENTIAL APPLICATIONS OF ION-IMPLANTED METAL-CUTTING TOOLS
    EHINGER, M
    BOHM, P
    LAUFFER, HJ
    WERKSTATTSTECHNIK ZEITSCHRIFT FUR INDUSTRIELLE FERTIGUNG, 1987, 77 (09): : 475 - 478
  • [45] The structure of ion-implanted amorphous silicon
    Gibson, JM
    Cheng, JY
    Voyles, P
    Treacy, MMJ
    Jacobson, DC
    MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, 1999, 540 : 27 - 30
  • [46] Ion-implanted lanthanum fluoride waveguides
    Huang, X
    Chandler, PJ
    Townsend, PD
    Rutt, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 533 - 536
  • [47] Luminescence and epitaxy of ion-implanted α-quartz
    Lieb, K. P.
    Sahoo, P. K.
    Gasiorek, S.
    Dhar, S.
    Keinonen, J.
    PHYSICA B-CONDENSED MATTER, 2007, 389 (01) : 9 - 17
  • [48] DEFECT RECOVERY OF ION-IMPLANTED INP
    WEYER, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 315 - 318
  • [49] Nanoindentation of ion-implanted crystalline germanium
    Oliver, D. J.
    Ruffell, S.
    Bradby, J. E.
    Williams, J. S.
    Swain, M. V.
    Munroe, P.
    Simpson, P. J.
    PHYSICAL REVIEW B, 2009, 80 (11):
  • [50] HREM STUDIES OF ION-IMPLANTED SILICON
    VANLANDUYT, J
    DEVEIRMAN, A
    VANHELLEMONT, J
    BENDER, H
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 1 - 10